msfc40 document number: ms fc40 www. smsemi .com sep.06,2013 1 module type diode maximum ratings symbol item conditions values units i d output current(d.c.) tc= 85 40 a i fsm surge forward current t=10ms tvj =45 1000 a i 2 t circuit fusing consideration 5000 a 2 s visol isolation bre akdown voltage(r.m.s) a.c.50hz;r.m.s.;1min 3000 v tvj operating junction temperature - 40 to +125 tstg storage temperature - 40 to + 125 mt mounting torque to terminals(m 5 ) 3 15% nm ms to heatsink(m 6 ) 5 15% nm weight module approximately 100 g thermal characteristics symbol item conditions values units r th(j - c) thermal impedance, m ax . junction to case 0.33 /w rth(c - s ) thermal impedance, m ax . case to heatsink 0.10 /w electrical characteristics thyristor/diode modules v rrm / v d rm 8 00 to 1 60 0v i f av / i t av 40 amp type v rrm / v d rm v rsm ms f c 40 - 08 ms f c 40 - 12 ms f c 40 - 16 800v 1200v 1600v 900v 1300v 1700v applications ? power converters ? lighting control ? dc m otor c ontrol and drives ? h eat an d temperature control circuit features ? international s tandard package ? high surge capability ? glass passivated chip ? simple mounting ? h eat transfer through aluminum oxide dbc ceramic isolated metal baseplate ? ul e243882 approved symbol item conditions values units min. typ. max. v fm forward voltage drop, max. t=25 i f = 200 a 1.95 v i r rm repetitive peak reverse current, max. t vj =25 v rd =v rrm t vj =1 25 v rd =v rrm 0. 5 6 ma ma m s f c 1 3 2 4 5
msfc40 document number: ms fc40 www. smsemi .com sep.06,2013 2 thermal characteristics symbol item conditions values units r th(j - c) thermal impedance, m ax . junction to case 0.65 /w rth(c - s ) thermal impedance, m ax . case to heatsink 0.20 /w electrical characteristics symbol item conditions values units i tav average on - state current s ine 180 o ; tc= 85 40 a i t sm surge on - state current t vj =45 t=10ms, sine t vj = 12 5 t=10ms, sine 1000 850 a i 2 t circuit fusing consideration t vj =45 t=10ms, sine t vj = 12 5 t=10ms, sine 5000 3600 a2s viso l isolation breakdown voltage(r.m.s) a.c.50hz;r.m.s.;1min 30 00 v tvj operating junction temperature - 40 to + 1 25 tstg storage temperature - 40 to + 125 mt mounting torque to terminals(m5) 3 15% nm ms to heatsink(m6) 5 15% nm di/dt critical rate of rise of on - state current t vj = t vjm , 2/3 v drm ,i g =500ma t r<0.5us,tp>6us 150 a/us dv/dt critical rate of rise of off - state voltag e, min. t j =t vjm ,2/3 v drm linear voltage rise 1000 v/us a maximum allowable acceleration 50 m/ s 2 symbol item conditions values units min. typ. max. v t m peak on - state voltage, max . t=25 i t = 120 a 1.95 v i rrm / i drm repetitive peak reverse current , max. / repetitive peak off - state current, max. t vj =t vjm ,v r =v rrm ,v d = v drm 15 ma v to on state threshold voltage for power - loss calculations only (t vj =125 ) 1.0 v r t value of on - state slope resistance. max t vj =t vjm 4.5 m ? v gt g ate trigger voltage, m ax . t vj =25 , v d =6v 2.5 v i gt gate trigger current, m ax . t vj =25 , v d =6v 150 ma v gd non - triggering gate voltage, m ax . t vj = 1 25 ,v d =2/3 v drm 0.25 v i gd non - triggering gate current , m ax . t vj = 1 25 , v d =2/3 v drm 6 ma i l lat ching current, max. t vj =25 , r g = 33 ? 300 600 ma i h holding current, max. t vj =25 , v d =6v 150 2 6 0 ma tgd gate controlled delay time t vj =25 , ig= 1 a , dig/dt= 1 a/us 1 us tq circuit commutated turn - off time t vj =t vjm 80 us
msfc40 document number: ms fc40 www. smsemi .com sep.06,2013 3 perform ance curves fig1. power dissipation fig2.forward current derating curve 0 i tav 10 20 30 40 50 a 60 100 w 75 50 25 p tav 0 rec.30 rec. 60 rec. 120 sin . 180 dc fig3. transient thermal impedance fig4. max non - repetitive forward surge current fig5. forward characteristics 0.001 t 0.01 0.1 1 10 s 100 1.0 / w 0.5 0 z th(j - c ) z th(j - s ) 10 100 ms 1000 50hz 1000 a 500 0 0 v tm 0.5 1.0 1.5 2.0 v 2.5 250 a 200 150 100 25 i t 0 max . t yp . dc sin . 180 rec. 120 rec. 60 rec.30 i tavm 0 tc 50 100 130 150 60 a 48 36 24 12 0 25 - - - 125
msfc40 document number: ms fc40 www. smsemi .com sep.06,2013 4 package outline information case : f 1 dimensions in mm fig6. gate trigger characteristics 1/2 msfc40 v gd 125 i gd 125 i gt v gt 20v ;20 ? pg(tp) 0.001 i g 0.01 0.1 1 10 a 100 100 v 10 1 v g 0.1 1.1 - 40 25 125 t vj 1 5 0 w ( 0 . 1 m s ) 1 0 0 w ( 0 . 5 m s ) 5 0 w ( 8 m s )
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